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DIM600XSM45-F000
Single Switch IGBT Module
DS5874-1.1 August 2006 (LN24724)
FEATURES
* * * * * * 10s Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability High isolation module
KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max)
4500V 2.9 V 600A 1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
* *
* *
High Reliability Inverters Motor Controllers Traction Drives Choppers
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 6500V and currents up to 3600A. The DIM600XSM45-F000 is a single switch 4500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Single switch circuit diagram
Outline type code: X
ORDERING INFORMATION
Order As: DIM600XSM45-F000 Note: When ordering, please use the complete part number
(See package details for further information) Fig. 2 Electrical connections - (not to scale)
Page 1 of 8Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 www.dynexsemi.com Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF
DIM600XSM45-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbo l VCES VGES IC IC(PK) Pmax It Visol QPD
2
Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max.transistor power dissipation Diode I t value (Diode arm) Isolation voltage-per module Partial discharge-per module
2
Test Conditions VGE =0V
Max. 4500 20
Units V V A A kW kA s kV pC
2
Tcase =95 C 1ms, Tcase=115 C Tcase =25 C, T j =150 C VR =0,tp =10ms,Tvj =125 C Commoned terminals to base plate. AC RMS,1 min,50Hz IEC1287.V1 =4800V, V2 =3500V, 50Hz RMS
600 1200 10.4 TBD 7400 10
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index)
Symbol
AlN AlSiC 56mm 26mm > 600 Test Conditions Continuous dissipation junction to case Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting M6 Electrical connections M4 Electrical connections M8 -40 Min Typ. Max 12 24 8 150 125 125 5 2 10 Units C/kW C/kW C/kW C C C Nm Nm Nm
Parameter Thermal resistance -transistor (per switch) Thermal resistance -diode (per switch) Thermal resistance -case to heatsink (per module) Junction temperature
Rth(j-c) Rth(j-c) Rth(c-h) Tj
Tstg
Storage temperature range Screw torque
2/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600XSM45-F000
ELECTRICAL CHARACTERISTICS
T case = 25 unless stated otherwise. C
Symbo l
ICES
Parameter Collector cut-off current
Test Conditions
VGE =0V,VCE =VCES VGE =0V,VCE =VCES ,Tcase =125 C
Min
Typ
Max 1 60 8
Units mA mA uA V V V
IGES VGE(TH) VCE(sat)
Gate leakage current Gate threshold voltage
Collector-emitter saturation voltage
VGE = 20V,VCE =0V IC =80mA,VGE =VCE VGE =15V,IC =600A VGE =15V,IC =600A,TVJ =125 C
5.5
6.5 2.9 3.5
7.0
IF IFM VF
Diode forward current Diode maximum forward current Diode forward voltage
DC tp =1ms IF =600A IF =600A,TVJ =125 C
600 1200 3.0 3.1 130 1.8 15 135
A A V V nF nF nH A A
Cies Cres LM RINT
Input capacitance Reverse transfer capacitance Module inductance Internal transistor resistance
VCE =25V,VGE =0V,f =1MHz VCE =25V,VGE =0V,f =1MHz --
Tj 125 C,V CC 3000V, SCData
I1 I2
2800 2500
Short circuit.I SC
t p = 10 us, VCE(max)=VCES - L*.di/dt IEC 60747-9
Note:
*
Measured at the power busbars and not the auxiliary terminals
L is the circuit inductance + L M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/7
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DIM600XSM45-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25 unless stated otherwise C
Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr Erec
Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy
Test Conditions IC =600A VGE =15V VCE =2250V RG(ON) =4.7 RG(OFF)=11 Cge =110nF L ~200nH
Min
Typ. 5.0 250 1500 850 220 1800 20
Max
Units us ns mJ ns ns mJ uC uC A mJ
IF =600A,VCE =2250V, dIF/dt =3000A/us
475 700 600
Tcase = 125 unless stated otherwise C Symbol
Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy
Test Conditions IC =600A VGE =15V VCE =2250V RG(ON) =4.7 RG(OFF)=11 Cge =110nF L ~200nH IF =600A,VCE =2250V, dIF/dt =3000A/us
Min
Typ. 5.2 250 1700 800 220 2700 850 820 1050
Max
Units us ns mJ ns ns mJ uC A mJ
td(off) tf EOFF td(on) tr EON Qrr Irr Erec
4/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600XSM45-F000
1200
Common emitter Tcase = 25 C VCE is measured at power busbars and not the auxiliary terminals
1200
Common emitter Tcase = 125 C VCE is measured at power busbars and not the auxiliary terminals
1000
1000
Collector current, Ic - (A)
Collector current, Ic - (A)
800
800
600
600
400
Vge=10V Vge=12V Vge=15V Vge=20V
400
Vge=10V Vge=12V Vge=15V Vge=20V
200
200
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-emitter voltage, Vce - (V)
0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
3000
Eon (mJ) Conditions: VCC = 2250V Tcase = 125 C Rg = 4.7Ohms Cge =110nF Vge =+/- 15V Eoff (mJ) Erec (mJ)
Fig. 4 Typical output characteristics
8000 7000
Conditions: VCC = 2250V Ic = 600A Tcase = 125 C Cge =110nF Vge = +/- 15V
Switching Energy - Esw (mJ)
Switching Energy - Esw (mJ)
6000 5000 4000 3000 2000 1000
2000
Eon (mJ) Eoff (mJ) Erec (mJ)
1000
0 0 200 400 600
0 0 5 10 15 20 25 30
Collector Current - Ic (A)
Gate Resistance - Rg (Ohms)
Fig.5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5/7
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DIM600XSM45-F000
1200 25C 125C 1000
1400
1200
VF is measured at power busbars and not the auxiliary terminals
Forward Current If - ( A)
1000
Collector current, Ic (A)
800
800
Module
Chip
600
600 Tcase = 125'C Vge = +/-15V Rg(off) =11ohms
400
400 200
200
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0 4000
4200
4400
4600
4800
5000
Forward voltage, Vf - (V)
Fig. 7 Diode typical forward characteristics
100
Collector emitter voltage, Vce (V)
Fig. 8 Reverse bias safe operating area
Transient thermal impedance, Zth(j-c) - ('C/kW)
1000 900
Tj = 125 C
Rth IGBT Rth diode
Reverse recoery current, I rr-(A)
800 700 600 500 400 300 200 100 0 0 1000 2000 3000 4000 5000
10
1 0.001
0.01
0.1
1
10
Pulse time, tp - (s)
IG B T D io d e
Reverse voltage, VR -(V)
Fig. 9 Diode reverse bias safe operating area
R i ( C /k W ) ti (m s ) R i ( C /k W ) ti (m s )
1 0 .4 6 0 .1 7 0 .9 0 0 .1 7
2 2 .1 0 8 .0 8 4 .2 2 8 .0 8
3 3 .6 4 5 1 .9 2 7 .2 8 5 1 .9 2
4 5 .8 6 2 8 0 .5 1 1 .7 1 2 8 0 .5
Fig. 10 Transient thermal impedance
6/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600XSM45-F000
PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 1100g Module outline type code: X
Fig. 11 Outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
7/7
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DIM600XSM45-F000
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Tel: +44(0)1522 500500
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
8/7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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